A silicon diode has a reverse saturation current (I_s=5 imes10^-17, ext{A}) and an ideality factor (n=1.2). At 300 K, what forward voltage (V) is required to obtain a forward current of (0.1, ext{A}) using the Shockley equation (I=I_s[exp(V/(nV_T))-1]) with (V_T=25.85, ext{mV})?

Question

A silicon diode has a reverse saturation current (I_s=5 imes10^-17,	ext{A}) and an ideality factor (n=1.2). At 300 K, what forward voltage (V) is required to obtain a forward current of (0.1,	ext{A}) using the Shockley equation (I=I_s[exp(V/(nV_T))-1]) with (V_T=25.85,	ext{mV})?

Accepted Answer

(Vapprox1.09,	ext{V})

A silicon diode has a reverse saturation current (I_s=5 $im es 1 0^{- 17}$ ,\text{A}) and an ideality factor (n=1.2). At 300 K, what forward voltage (V) is required to obtain a forward current of (0.1,\text{A}) using the Shockley equation (I=I_s[exp(V/(nV_T))-1]) with (V_T=25.85,\text{mV})?

Step-by-step solution

A silicon diode has a reverse saturation current (I_s=5 imes10−17,\text{A}) and an ideality factor (n=1.2). At 300 K, what forward voltage (V) is required to obtain a forward current of (0.1,\text{A}) using the Shockley equation (I=I_s[exp(V/(nV_T))-1]) with (V_T=25.85,\text{mV})?

Step-by-step solution

A silicon diode has a reverse saturation current (I_s=5 $im es 1 0^{- 17}$ ,\text{A}) and an ideality factor (n=1.2). At 300 K, what forward voltage (V) is required to obtain a forward current of (0.1,\text{A}) using the Shockley equation (I=I_s[exp(V/(nV_T))-1]) with (V_T=25.85,\text{mV})?